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Can you provide a brief overview of the Nanjing Incorporated Rectifier Die Glass Passivation Process (GPP)?

The Nanjing Glass Passivation Process (GPP) for Rectifier Dice occurs in the wafer form after the Wafer Diffusion (P+) Process.

Immediately after the Diffusion Process, the wafer is masked with a photoresist film and the dice are pattern etched through the junction plane, this operation is called mesa etching.

The exposed p-n junction surface is then passivated in a two-layer process.

  • First, an oxygen doped, Semi-Insulating Poly Crystalline Silicon (SIPOS) layer is deposited onto the silicon junction surface by Low Pressure Chemical Vapor Deposition (LPCVD) to stabilize the region.
  • Second, a thick layer of fired - on, high temperature glass is deposited over the SIPOS layer and protects the junction from ambient contamination and mechanical damage.

The wafers are then masked with a photoresist film and the top (Anode) Contact Metallization Layer of sintered nickel is applied (see figure 1).

Figure 1. Cross Section of GPP Die

 

Note: This process is typical to our GPP rectifier die; however, particular processes and materials used may vary depending on the specific device. Please contact a Nanjing Incorporated Applications Engineer for more detailed information regarding a specific device.

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